Перегляд за автором "Popov, V.G."

Сортувати за: Порядок: Результатів:

  • Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity ...
  • Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...
  • Anchugov, O.V.; Matveev, Y.G.; Shvedov, D.A.; Bochkov, V.D.; Bochkov, D.V.; Dyagilev, V.M.; Ushich, V.G.; Mikhailov, S.F.; Popov, V.G. (Вопросы атомной науки и техники, 2008)
    For FEL (Free Electron Laser) complex used in Duke University, pulse generators (kickers) of Injection, Extraction and Generator of injection into a big ring are developed and built. As fast switches TPI-type thyratrons ...
  • Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    This review comprises modern publications devoted to problems of development and manufacturing photovoltaic solar energy converters (solar cells) based on block multicrystalline silicon (poly-Si). Methods of growing ...
  • Valakh, M.Ya.; Gamov, D.V.; Dzhagan, V.M.; Lytvyn, O.S.; Melnik, V.P.; Romanjuk, B.M.; Popov, V.G.; Yukhymchuk, V.O. (Functional Materials, 2006)
    The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed ...